Bismuth-doped Pb_1-xSn_xTe diode lasers with low-threshold currents

Publisher Website

1 January 1969

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics

Vol. 5 (1) , 50-51
https://doi.org/10.1109/jqe.1969.1075663

Abstract

No abstract available

Keywords

This publication has 6 references indexed in Scilit:

LONG-WAVELENGTH INFRARED Pb1−xSnxTe DIODE LASERS
Applied Physics Letters, 1968
Preparation of epitaxial SnTe films of controlled carrier concentration
Solid State Communications, 1966
Band Structure and Laser Action in ${Pb}_{x} {Sn}_{1 - x} Te$
Physical Review Letters, 1966
Spontaneous and Stimulated Recombination Radiation in Semiconductors
Physical Review B, 1964
Deviations from stoichiometry and electrical properties in SnTe
Journal of Physics and Chemistry of Solids, 1963
PbSe Composition Stability Limits
The Journal of Chemical Physics, 1962