Preparation of epitaxial SnTe films of controlled carrier concentration
- 31 August 1966
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 4 (8) , 399-402
- https://doi.org/10.1016/0038-1098(66)90255-9
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- The electric-susceptibility hole mass and optical dielectric constant of SnTeSolid State Communications, 1965
- Electrical and Optical Properties of Epitaxial Films of PbS, PbSe, PbTe, and SnTePhysical Review B, 1965
- Fundamental Absorption Edge of Tin TelluridePhysical Review B, 1965
- Susceptibility mass at 300° and 80°K for two different carrier concentrations of SnTeSolid State Communications, 1964
- EVIDENCE THAT SnTe IS A SEMICONDUCTORApplied Physics Letters, 1964
- Deviations from stoichiometry and electrical properties in SnTeJournal of Physics and Chemistry of Solids, 1963
- Tin-Tellurium Phase Diagram in the Vicinity of Stannous Telluride SnTeJapanese Journal of Applied Physics, 1962