Picosecond relaxation of hot-carrier distributions in GaAs/GaAsP strained-layer superlattices
- 6 July 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (1) , 48-50
- https://doi.org/10.1063/1.98883
Abstract
We have studied the energy relaxation of hot carriers in GaAs/GaAs0.5P0.5 strained-layer superlattices following picosecond photoexcitation. A significant enhancement of highly excited carrier distribution lifetimes over those of bulk GaAs was observed at cryogenic as well as room temperatures. These results support the explanation of photocurrent results reported for solar photoelectrodes made with these structures. Comparison results were also obtained for a GaAs/AlGaAs multiple quantum well structure which showed even longer hot-carrier lifetimes.Keywords
This publication has 20 references indexed in Scilit:
- Photocurrent spectroscopy of lattice-matched superlattice electrodes in photoelectrochemical cellsApplied Physics Letters, 1987
- Tunneling dynamics of photogenerated carriers in semiconduc- tor superlatticesPhysical Review B, 1986
- Photocurrent spectroscopy of GaAs/As quantum wells in an electric fieldPhysical Review B, 1986
- Quantization effects in the photocurrent spectroscopy of superlattice electrodesJournal of the American Chemical Society, 1985
- Picosecond luminescence measurements of hot carrier relaxation in III–V semiconductors using sum frequency generationPhysica B+C, 1985
- Energy-gap discontinuities and effective masses for quantum wellsPhysical Review B, 1984
- Picosecond relaxation of hot carriers in highly photoexcited bulk GaAs and GaAs-AlGaAs multiple quantum wellsApplied Physics Letters, 1984
- Superlattice band structure in the envelope-function approximationPhysical Review B, 1981
- Direct Measurement of Hot-Electron Relaxation by Picosecond SpectroscopyPhysical Review Letters, 1979
- Valence-Band Parameters in Cubic SemiconductorsPhysical Review B, 1971