Direct Measurement of Hot-Electron Relaxation by Picosecond Spectroscopy
- 16 April 1979
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 42 (16) , 1090-1093
- https://doi.org/10.1103/physrevlett.42.1090
Abstract
The time dependence of the optical absorption and the gain of a hot electron-hole plasma in GaAs is measured by means of tunable picosecond light pulses. The electrons and holes (∼ ) are photoexcited via two-photon absorption. Our measurements provide a detailed picture of the temperature evolution, showing that in 250 ps the plasma cools from over 100 K down to ∼ 40 K and does not reach the lattice temperature. The energy relaxation process is shown to be polar LO-phonon emission of hot electrons and holes.
Keywords
This publication has 12 references indexed in Scilit:
- Electron-hole plasma in direct-gap semiconductors with low polar coupling: GaAs, InP, and GaSbPhysical Review B, 1978
- Low density photoexcitation phenomena in semiconductors: Aspects of theory and experimentSolid-State Electronics, 1978
- Hot electrons and phonons under high intensity photoexcitation of semiconductorsSolid-State Electronics, 1978
- Condensation of Optically Excited Carriers in CdS: Determination of an Electron-Hole-Liquid Phase DiagramPhysical Review Letters, 1977
- Direct determination of reduced band gap and chemical potential in an electron-hole plasma in high-purity GaAsSolid State Communications, 1976
- Recombination without k-selection rules in dense electron-hole plasmas in high-purity GaAs lasersApplied Physics Letters, 1974
- Energy Relaxation of Photoexcited Hot Electrons in GaAsPhysical Review B, 1973
- Electron-Hole Liquids in SemiconductorsPhysical Review B, 1973
- Spontaneous and Stimulated Recombination Radiation in SemiconductorsPhysical Review B, 1964
- The influence of interelectronic collisions on conduction and breakdown in polar crystalsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1958