Recombination without k-selection rules in dense electron-hole plasmas in high-purity GaAs lasers
- 15 May 1974
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 24 (10) , 492-494
- https://doi.org/10.1063/1.1655025
Abstract
The low‐temperature emission spectra of high‐purity GaAs exhibit an intense new emission line at high optical pumping levels, which is due to band‐to‐band recombination within an electron‐hole plasma. The experimentally determined gain spectra of this laser transition are fitted to calculated line‐shape curves, which shows that the recombination takes place without k‐selection rules.Keywords
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