THM growth and properties of In1−xGaxP bulk material
- 1 September 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 97 (2) , 245-253
- https://doi.org/10.1016/0022-0248(89)90205-4
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Heteroepitaxial growth of Ga0.51In0.49P/GaAs on Si by low-pressure organometallic chemical vapor depositionApplied Physics Letters, 1988
- Influence of growth temperature on crystalline structure in Ga0.5In0.5P grown by organometallic vapor phase epitaxyApplied Physics Letters, 1988
- Growth of In0.5Ga0.5P on GaAs by LPE: The influence of Growth Temperature and Lattice Mismatch on PhotoluminescenceJapanese Journal of Applied Physics, 1988
- InGaP/InP waveguidesApplied Physics Letters, 1987
- Low temperature phase diagram of In-Ga-P ternary systemJournal of Crystal Growth, 1980
- Simultaneous synthesis and growth by THM of large HgTe crystals of high purityJournal of Crystal Growth, 1977
- Phase diagram analysis using a partially associated solution model for III–V binary systemsJournal of Physics and Chemistry of Solids, 1975
- Phase equilibria in ternary III–V systemsProgress in Solid State Chemistry, 1972
- The calculation of regular solution interaction parameters between elements from groups III, IV and V of the periodic tableMaterials Research Bulletin, 1971
- Phase equilibria and vapor pressures of the system In+PThe Journal of Chemical Thermodynamics, 1970