Heteroepitaxial growth of Ga0.51In0.49P/GaAs on Si by low-pressure organometallic chemical vapor deposition
- 26 December 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (26) , 2614-2616
- https://doi.org/10.1063/1.100175
Abstract
In this letter we report on preliminary results of heteroepitaxial growth of Ga0.51In0.49P on Si with a GaAs interlayer by low‐pressure organometallic chemical vapor deposition (OMCVD). The surface morphologies and crystalline quality of the films were found to be critically dependent on the growth parameters of the initial GaAs buffer layer. Under optimum conditions, specular single‐crystal Ga0.51In0.49P epilayers can be reproducibly obtained. Capacitance‐voltage measurements show that the carrier distribution in the grown layer is very uniform. The 77 K photoluminescence spectrum exhibits a strong near‐band‐edge emission with a half‐width of 22 meV. These results can compete with those reported previously for the OMCVD‐grown GaxIn1−xP on GaAs substrates.Keywords
This publication has 14 references indexed in Scilit:
- GaAs heteroepitaxial growth on Si for solar cellsApplied Physics Letters, 1988
- Heteroepitaxial growth of InP on GaAs by low-pressure metalorganic chemical vapor depositionJournal of Applied Physics, 1987
- Improvements in the heteroepitaxy of GaAs on SiApplied Physics Letters, 1987
- Low pressure metalorganic vapor phase epitaxy of InP using a trimethylindium-trimethylphosphine adduct sourceApplied Physics Letters, 1987
- Nucleation of GaAs on Si: Experimental evidence for a three-dimensional critical transitionApplied Physics Letters, 1987
- Initial stages of epitaxial growth of GaAs on (100) siliconJournal of Applied Physics, 1987
- Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBEJournal of the Electrochemical Society, 1986
- Doped InGaP grown by MOVPE on GaAsJournal of Crystal Growth, 1984
- Room-temperature pulsed operation of AlGaInP/GaInP/AlGaInP double heterostructure visible light laser diodes grown by metalorganic chemical vapor depositionApplied Physics Letters, 1983
- Heterostructure bipolar transistors and integrated circuitsProceedings of the IEEE, 1982