Doped InGaP grown by MOVPE on GaAs
- 1 September 1984
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 68 (1) , 27-31
- https://doi.org/10.1016/0022-0248(84)90392-0
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Optically Pumped Laser Operation of InGaAsP/InGaP Double Heterostructures Grown by Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1983
- Organometallic Vapor Phase Epitaxial Growth of In1-xGaxAsyP1-y on GaAsJapanese Journal of Applied Physics, 1983
- Metalorganic vapor phase epitaxial growth of In1−xGaxPJournal of Crystal Growth, 1981
- AlGaAs grown by metalorganic chemical vapor deposition for visible laserJournal of Applied Physics, 1981
- Organometallic Vapor Phase Epitaxial Growth of In1-xGaxP (x ∼0.5) on GaAsJapanese Journal of Applied Physics, 1981