Optically Pumped Laser Operation of InGaAsP/InGaP Double Heterostructures Grown by Metalorganic Chemical Vapor Deposition

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Abstract
InGaAsP/InGaP double heterostructures have been grown on GaAs(100) substrates by low pressure metalorganic chemical vapor deposition. We have carried out a lasing experiment with a cleaved sample of ∼200 µm width by optical pumping. At high excitation levels, we have observed a stimulated emission of a wavelength of 717 nm at 150 k. The threshold power density is estimated to be about 4.5×104 W/cm2 at this temperature. We also mention the room-temperature lasing operation of similar double heterostructure samples.