AlGaAs grown by metalorganic chemical vapor deposition for visible laser
- 1 April 1981
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (4) , 2792-2798
- https://doi.org/10.1063/1.329007
Abstract
Doping efficiency of selenium hydride (for Se donors) to GaAs in metalorganic chemical vapor deposition was shown to be high and near unity, whereas that of sulfur hydride (for S donors) was nearly two orders lower. The difference was even greater with the addition of aluminum to grow AlxGa1−xAs. Doping efficiency of diethyl zinc (for Zn acceptors) was shown to be three to four orders lower than of Se. A higher partial flow ratio of arsenic to column III elements was necessary to grow high-quality layers of AlxGa1−xAs with larger x. Room-temperature cw operation of AlxGa1−xAs/AlyGa1−yAs double heterostructure visible (760–780 nm) lasers grown by MOCVD has been achieved. The planar lasers, with an oxide-insulated stripe structure 10 μm wide and 250 μm long showed a cw threshold current from 150 to 300 mA.This publication has 10 references indexed in Scilit:
- An Anomaly in the Relation of Hall Coefficient to Resistivity in n-Type AlxGa1-xAsJapanese Journal of Applied Physics, 1981
- Electron mobility in compensated GaAs and AlxGa1−xAsJournal of Applied Physics, 1980
- Silicon and germanium doping of epitaxial gallium arsenide grown by the trimethylgallium-arsine methodJournal of Crystal Growth, 1979
- Growth and characterization of MO/VPE double-heterojunction lasersIEEE Journal of Quantum Electronics, 1979
- Electron mobility in AlxGa1−xAsJournal of Applied Physics, 1979
- Increase in luminescence efficiency of AlxGa1−xAs grown by organometallic VPEApplied Physics Letters, 1979
- Metalorganic c.v.d. growth of GaAs-GaAlAs double heterojunction lasers having low interfacial recombination and low threshold currentElectronics Letters, 1979
- Single-longitudinal-mode cw room-temperature Ga1−xAlxAs-GaAs channel-guide lasers grown by metalorganic chemical vapor depositionApplied Physics Letters, 1978
- Ga(1−x)AlxAs/Ga(1−y)AlyAs double-heterostructure room-temperature lasers grown by metalorganic chemical vapor depositionApplied Physics Letters, 1977
- Room-temperature operation of Ga(1−x)AlxAs/GaAs double-heterostructure lasers grown by metalorganic chemical vapor depositionApplied Physics Letters, 1977