Increase in luminescence efficiency of AlxGa1−xAs grown by organometallic VPE
- 1 June 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 34 (11) , 794-796
- https://doi.org/10.1063/1.90647
Abstract
A modification of the cold‐wall organometallic vapor‐phase epitaxial (OMVPE) process for the growth of AlxGa1−xAs layers is described. Graphite baffles placed in the gas stream act to greatly increase the photoluminescence efficiency of the AlxGa1−xAs. Preliminary evidence indicates that the effect of the baffles may be to provide a solid surface upon which Al2O3 can be deposited from the reaction of trimethylaluminum with any residual O2 and/or H2O in the vapor phase. The ’’gettering’’ action apparently reduces oxygen contamination of the AlxGa1−xAs.Keywords
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