Electronic structure of substitutional oxygen in silicon
- 30 September 1989
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 71 (12) , 1107-1111
- https://doi.org/10.1016/0038-1098(89)90720-5
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Atomic oxygen in silicon: The formation of the Si—O—Si bondPhysical Review B, 1987
- Theoretical study of oxygen in silicon: Breaking of the Si—Si bondPhysical Review B, 1987
- Theory of off-center impurities in semiconductorsPhysical Review B, 1986
- Valence-bond theory of off-center impurities in silicon: Substitutional nitrogenPhysical Review B, 1986
- Tight-binding Green’s-function approach to off-center defects: Nitrogen and oxygen in siliconPhysical Review B, 1986
- Many-electron treatment of the off-center substitutional O in SiPhysical Review B, 1986
- Identification of Chalcogen Point-Defect Sites in Silicon by Total-Energy CalculationsPhysical Review Letters, 1985
- Theory of off-center impurities in silicon: Substitutional nitrogen and oxygenPhysical Review B, 1984
- Defects in Irradiated Silicon. II. Infrared Absorption of the Si-CenterPhysical Review B, 1961
- Defects in Irradiated Silicon. I. Electron Spin Resonance of the Si-CenterPhysical Review B, 1961