c-axis inclined ZnO piezoelectric shear wave films
- 15 February 1983
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (4) , 352-354
- https://doi.org/10.1063/1.93930
Abstract
This letter reports on the growth and characterization of ZnO films having c axis oriented 40° to the substrate normal. These films are of significant interest for shear wave generation for bulk wave delay lines and resonators. The films were grown on Si wafers or membranes under low pressure and high growth rate conditions in a reactive dc planar magnetron sputtering system having an auxiliary anode structure. Shear wave resonators were fabricated and used for film evaluation. A ZnO/Si composite resonator exhibited a Q of approximately 4600 at 293‐MHz fundamental resonance. The effective coupling coefficient of the film alone was found to be 17% (k2=0.029) using an edge‐only supported ZnO plate resonator. The temperature coefficient of the ZnO resonator was found to be −36 ppm/°C and −20.5 ppm/°C for the composite structure.Keywords
This publication has 4 references indexed in Scilit:
- Acoustic bulk wave composite resonatorsApplied Physics Letters, 1981
- Zinc-oxide thin-film surface-wave transducersProceedings of the IEEE, 1976
- Variation ofc-Axis Orientation of ZnO Thin Films Deposited by DC Diode SputteringJapanese Journal of Applied Physics, 1973
- Cadmium Sulphide and Zinc Oxide Thin-Film TransducersIEEE Transactions on Sonics and Ultrasonics, 1968