Effects of Ar and H2 annealing on the electrical properties of oxides on 6H SiC
- 31 January 1995
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 29 (1-3) , 131-133
- https://doi.org/10.1016/0921-5107(94)04019-z
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Low-frequency, high-temperature conductance and capacitance measurements on metal-oxide-silicon carbide capacitorsJournal of Applied Physics, 1994
- Thermal oxidation and electrical properties of silicon carbide metal-oxide-semiconductor structuresJournal of Applied Physics, 1993
- Behavior of inversion layers in 3C silicon carbideApplied Physics Letters, 1986