Modeling of grain boundary barrier modulation in ZnO invisible thin film transistors
- 7 February 2004
- journal article
- Published by Elsevier in Physica E: Low-dimensional Systems and Nanostructures
- Vol. 21 (2-4) , 911-915
- https://doi.org/10.1016/j.physe.2003.11.149
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Modeling and simulation of polycrystalline ZnO thin-film transistorsJournal of Applied Physics, 2003
- High Mobility Thin Film Transistors with Transparent ZnO ChannelsJapanese Journal of Applied Physics, 2003
- Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin filmsApplied Physics Letters, 1998
- Optically pumped lasing of ZnO at room temperatureApplied Physics Letters, 1997