Growth of Ni2Si by rapid thermal annealing: Kinetics and moving species
- 1 October 1987
- journal article
- solids and-materials
- Published by Springer Nature in Applied Physics A
- Vol. 44 (2) , 157-160
- https://doi.org/10.1007/bf00626417
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Kinetics of silicides on Si〈100〉 and evaporated silicon substratesThin Solid Films, 1986
- Anomalous first-phase formation in rapidly thermal annealed, thin-layered Si/Ni/Si filmsApplied Physics Letters, 1986
- Titanium silicidation by halogen lamp annealingJournal of Applied Physics, 1985
- Growth of Co-Silicides from single crystal and evaporated SiApplied Physics A, 1985
- Formation of palladium silicide by rapid thermal annealingApplied Physics A, 1984
- Transient Processing of Titanium Silicides in a Non-Isothermal ReactorMRS Proceedings, 1984
- Short Time AnnealingJournal of the Electrochemical Society, 1983