Doping dependence of the Schottky-barrier height of Ti-Pt contacts to n-gallium arsenide
- 1 September 1986
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 60 (5) , 1832-1833
- https://doi.org/10.1063/1.337226
Abstract
The barrier height and ideality factor of Ti–Pt contacts on n‐type GaAs have been measured in the doping range Nd =3.3×1016 to 3×1018 cm−3. The flat‐band barrier height, determined from capacitance‐voltage measurements, is found to be independent of Nd whereas the effective barrier height for current transport, defined by the relation for thermionic emission, decreases rapidly at Nd >1×1018 cm−3. The results agree quite well with thermionic field‐emission theory.This publication has 4 references indexed in Scilit:
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- Ohmic contacts to n-type GaAsJournal of Vacuum Science & Technology B, 1985
- Schottky-barrier diodes of MBE-deposited antimony on n and p gallium arsenideSolid-State Electronics, 1984
- Normalized thermionic-field (T-F) emission in metal-semiconductor (Schottky) barriersSolid-State Electronics, 1969