Schottky-barrier diodes of MBE-deposited antimony on n and p gallium arsenide
- 31 December 1984
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 27 (12) , 1117-1122
- https://doi.org/10.1016/0038-1101(84)90052-2
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
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