Effects of growth interruption on uniformity of GaAs quantum wires formed on vicinal GaAs(110) surfaces by MBE
- 27 February 1998
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 51 (1-3) , 229-232
- https://doi.org/10.1016/s0921-5107(97)00266-3
Abstract
No abstract availableFunding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 7 references indexed in Scilit:
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- Structural analysis of AlGaAs quantum wires on vicinal (110)GaAs by transmission electron microscopy and energy dispersive X-ray spectroscopyJournal of Crystal Growth, 1995
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