Growth parameter dependence of step patterns in AlGaAs molecular beam epitaxy on vicinal GaAs(1 1 0) inclined toward (1 1 1)A
- 1 May 1997
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 175-176, 1075-1080
- https://doi.org/10.1016/s0022-0248(96)00929-3
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 15 references indexed in Scilit:
- Formation and Characterization of GaAs Quantum Wires at Giant Step Edges on Vicinal (110) GaAs SurfacesJapanese Journal of Applied Physics, 1995
- Step motion, patterns, and kinetic instabilities on crystal surfacesPhysical Review Letters, 1994
- Step structures during MBE growth of GaAs and AlGaAs films on vicinal GaAs(110) surfaces inclined toward (111)BSurface Science, 1992
- Formation of quantum well wire-like structures by MBE growth of AlGaAs/GaAs superlattices on GaAs (110) surfacesJournal of Crystal Growth, 1991
- Distribution of terrace widths on a vicinal surface within the one-dimensional free-fermion modelPhysical Review B, 1991
- The influence of step-step interactions on step wanderingSurface Science, 1990
- A mass spectrometric study of AsH3 and PH3 gas sources for molecular beam epitaxyJournal of Crystal Growth, 1986
- Interaction kinetics of As2 and Ga on {100} GaAs surfacesSurface Science, 1977
- Interaction kinetics of As4 and Ga on {100} GaAs surfaces using a modulated molecular beam techniqueSurface Science, 1975
- Surface stoichiometry and structure of GaAsSurface Science, 1974