A new 800 V lateral MOSFET with dual conduction paths
- 13 November 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- A review of RESURF technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- High voltage, high current lateral devicesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1980
- High voltage thin layer devices (RESURF devices)Published by Institute of Electrical and Electronics Engineers (IEEE) ,1979