A physics-based, analytical heterojunction bipolar transistor model, including thermal and high-current effects
- 1 January 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 40 (9) , 1570-1577
- https://doi.org/10.1109/16.231560
Abstract
No abstract availableKeywords
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