A study of current transport in p-N heterojunctions
- 30 September 1992
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 35 (9) , 1311-1323
- https://doi.org/10.1016/0038-1101(92)90166-a
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- An Ebers-Moll model for the heterostructure bipolar transistorSolid-State Electronics, 1986
- Analysis of d.c. characteristics of GaAlAsGaAs double heterojunction bipolar transistorsSolid-State Electronics, 1986
- Emitter—Base bandgap grading effects on GaAlAs/GaAs heterojunction bipolar transistor characteristicsIEEE Transactions on Electron Devices, 1985
- Electrical behavior of double heterojunction NpNGaAlAs/GaAs/GaAlAs bipolr transistorsSolid-State Electronics, 1985
- Boundary conditions for pn heterojunctionsSolid-State Electronics, 1984
- Modeling and characterization for high-speed GaAlAs-GaAs n-p-n heterojunction bipolar transistorsIEEE Transactions on Electron Devices, 1984
- Numerical analysis of heterostructure semiconductor devicesIEEE Transactions on Electron Devices, 1983
- Modeling semiconductor heterojunctions in equilibriumSolid-State Electronics, 1982
- Electrical behavior of an NPN GaAlAs/GaAs heterojunction transistorSolid-State Electronics, 1979
- p-n heterojunctionsSolid-State Electronics, 1964