Electrical behavior of double heterojunction NpNGaAlAs/GaAs/GaAlAs bipolr transistors
- 30 June 1985
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 28 (6) , 627-638
- https://doi.org/10.1016/0038-1101(85)90135-2
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Double heterojunction AlxGa1-xAs/GaAs bipolar transistors (DHBJT's) by MBE with a current gain of 1650IEEE Electron Device Letters, 1983
- Double heterojunction NpN GaAlAs/GaAs bipolar transistorElectronics Letters, 1982
- Design and fabrication of high-speed GaAlAs/GaAs heterojunction transistorsIEEE Transactions on Electron Devices, 1980
- Electrical behavior of an NPN GaAlAs/GaAs heterojunction transistorSolid-State Electronics, 1979
- Interface studies of AlxGa1−xAs-GaAs heterojunctionsJournal of Applied Physics, 1979