Spectral response of ZnSe-Zn1−xCdxTe heterojunction
- 1 July 1982
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (7) , 5146-5153
- https://doi.org/10.1063/1.331351
Abstract
The spectral response of ZnSe‐Zn1−xCdxTe (0⩽x⩽1) heterojunction is described. The heterojunction is formed by vacuum evaporation of ZnSe and Zn1−xCdxTe doped with In2Te3. The spectral response of this heterojunction is discussed for two cases, illuminated from the ZnSe side and from the Zn1−xCdxTe side. The theoretical results, based upon the assumption that the carriers excited by incident light are mainly transported by drift field, are in good agreement with the experimental results. Moreover, we could obtain a high internal quantum efficiency of 0.9 over the visible light range in this heterojunction.This publication has 12 references indexed in Scilit:
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