Formation of high-density hexagonal networks of InGaAs ridge quantum wires by atomic hydrogen-assisted selective molecular beam epitaxy

This publication has 6 references indexed in Scilit:

• Hexagonal binary decision diagram quantum logic circuits using Schottky in-plane and wrap-gate control of GaAs and InGaAs nanowires
  Physica E: Low-dimensional Systems and Nanostructures, 2001
• Improvement of Growth Process to Achieve High Geometrical Uniformity in InGaAs Ridge Quantum Wires Grown by Selective MBE on Patterned InP Substrate
  Japanese Journal of Applied Physics, 2001
• Origin of non-uniformity in MBE grown nanometer-sized InGaAs ridge quantum wires and its removal by atomic hydrogen-assisted cleaning
  Thin Solid Films, 2000
• Formation of device-oriented InGaAs coupled quantum structures by selective MBE growth on patterned InP substrates
  Physica E: Low-dimensional Systems and Nanostructures, 2000
• Size-Controlled Formation of Decananometer InGaAs Quantum Wires by Selective Molecular Beam Epitaxy on InP Patterned Substrates
  Japanese Journal of Applied Physics, 1999
• Atomic Hydrogen-Assisted GaAs Molecular Beam Epitaxy
  Japanese Journal of Applied Physics, 1995