GaAs power HBTs with 84% power-added efficiency operating in C-X band
- 1 October 1995
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- High-efficiency, class-B, S-band power amplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A study of Class C operation of GaAs power HBTsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Design Considerations for High Efficiency GaAs HBT MMIC Power AmplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1994
- Relationship between power added efficiency and gate-drain avalanche in GaAs m.e.s.f.e.t.sElectronics Letters, 1980