Ultralow threshold and uniform operation (1.3/spl plusmn/0.09 mA) in 1.3-μm strained-MOW 10-element laser arrays for parallel high-density optical interconnects
- 1 January 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 7 (1) , 1-3
- https://doi.org/10.1109/68.363395
Abstract
An ultralow-threshold 1.3-μm InGaAsP-InP 10-element monolithic laser array is achieved through careful optimization of a strained-MQW active layer. This array has a record-low threshold current, highly uniform threshold current characteristics (1.3/spl plusmn/0.09 mA and slope efficiency of 0.37/spl plusmn/0.01 W/A), and long-term reliability. This array is suitable as light sources for a parallel high-density optical interconnection system.Keywords
This publication has 9 references indexed in Scilit:
- Investigation of effect of strain onlow-threshold 1.3 µm InGaAsP strained-layerquantum well lasersElectronics Letters, 1994
- High-speed 1.55 μm InGaAs/InGaAsP multi-quantum well λ/4-shifted DFB lasersFiber and Integrated Optics, 1994
- All-MOCVD-grown BH laser on P-InP substratesPublished by SPIE-Intl Soc Optical Eng ,1993
- High temperature operation of 1.3 μm GaInAsP/Inp GRINSCH strained-layer quantum well lasersElectronics Letters, 1993
- Dependence of high-speed properties on the number of quantum wells in 1.55 mu m InGaAs-InGaAsP MQW lambda /4-shifted DFB lasersIEEE Journal of Quantum Electronics, 1993
- Low-threshold (3.2 mA per element) 1.3 mu m InGaAsP MQW laser array on a p-type substrateIEEE Photonics Technology Letters, 1992
- Low-threshold 1.5 mu m compressive-strained multiple- and single-quantum-well lasersIEEE Journal of Quantum Electronics, 1991
- High-performance 1.5 mu m wavelength InGaAs-InGaAsP strained quantum well lasers and amplifiersIEEE Journal of Quantum Electronics, 1991
- InGaAs/InP quantum well lasers with sub-mA threshold currentApplied Physics Letters, 1990