Switching and memory properties of some crystalline layer compounds
- 8 January 1973
- journal article
- Published by Springer Nature in La Rivista del Nuovo Cimento
- Vol. 3 (1) , 103-115
- https://doi.org/10.1007/bf02788093
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Memory properties of CdSe single crystalsSolid-State Electronics, 1973
- Memory Switching in GaSe, GaS, and GaSxSe(1−x) (0<x<1) Single CrystalsJournal of Applied Physics, 1971
- Double injection and electroluminescence in insulating GaSe and GaS0.5Se0.5 single crystalsJournal of Luminescence, 1971
- Electric field-induced filament formation in AsTeGe glassJournal of Non-Crystalline Solids, 1970
- Negative resistance and switching effect in the single crystal layer compounds SnS2 and ZrS2Solid State Communications, 1969
- Experimental Evidence for the Validity of Lampert's Theory in the Negative Resistance Region of the GaSe(Sn)Physica Status Solidi (b), 1969
- Reversible Electrical Switching Phenomena in Disordered StructuresPhysical Review Letters, 1968
- Hypothesis of Orbital Overlap ShiftingJournal of Applied Physics, 1965
- The Capture of Hot Electrons by Gold Centres in n-type GermaniumProceedings of the Physical Society, 1963
- Double Injection in InsulatorsPhysical Review B, 1962