Recombination-enhanced impurity diffusion in Be-doped GaAs
- 6 May 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (18) , 2015-2017
- https://doi.org/10.1063/1.105025
Abstract
Recombination‐enhanced impurity diffusion (REID) in Be‐doped GaAs has been observed for the first time. Current‐induced degradation of tunnel diodes has been investigated. The Be diffusion under forward bias is enhanced by a factor of about 1015 at room temperature, and the activation energy for the diffusion is reduced from 1.8 eV for thermal diffusion to 0.6 eV for REID. The RElD of Be, in which the energy released on minority‐carrier injection at the recombination center could enhance the diffusion, is thought to be the origin of the degradation.Keywords
This publication has 13 references indexed in Scilit:
- Dopant-dependent formation and annealing of the dominant native deep-level defect in liquid-phase epitaxial AlGaAsJournal of Applied Physics, 1989
- Growth and diffusion of abrupt beryllium-doped profiles in gallium arsenide by organometallic vapor phase epitaxyApplied Physics Letters, 1988
- Diffusion mechanisms and superlattice disordering in GaAsMaterials Science and Engineering: B, 1988
- Observation of Recombination-Enhanced Defect Reactions in SemiconductorsPhysical Review Letters, 1974
- DEGRADATION AND PASSIVATION OF GaP LIGHT-EMITTING DIODESApplied Physics Letters, 1971
- Degradation of Ge-Doped and Zn-Doped GaAs Tunnel DiodesJapanese Journal of Applied Physics, 1968
- Permanent degradation of GaAs tunnel diodesSolid-State Electronics, 1964
- Impurity diffusion and drift in germanium tunnel-diode junctionsSolid-State Electronics, 1963
- Rapid zinc diffusion in gallium arsenideSolid-State Electronics, 1962
- Theory of TunnelingJournal of Applied Physics, 1961