Observation of Recombination-Enhanced Defect Reactions in Semiconductors
- 19 August 1974
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 33 (8) , 489-492
- https://doi.org/10.1103/physrevlett.33.489
Abstract
Recombination-enhanced annealing of defects in semiconductors has been observed directly for the first time. The defects were produced in GaAs by 1-MeV electron irradiation and observed by transient-junction-capacitance techniques. The data clearly relate the enhanced defect annealing rate to electron-hole recombination processes at the defect.Keywords
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