Nickel silicide metal gate FDSOI devices with improved gate oxide leakage

Publisher Website

25 June 2003

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 271-274
https://doi.org/10.1109/iedm.2002.1175830

Abstract

No abstract available

This publication has 2 references indexed in Scilit:

Influences of buried-oxide interface on inversion-layer mobility in ultra-thin SOI MOSFETs
IEEE Transactions on Electron Devices, 2002
Electrical properties of Ru-based alloy gate electrodes for dual metal gate Si-CMOS
IEEE Electron Device Letters, 2002