Electrical properties of Ru-based alloy gate electrodes for dual metal gate Si-CMOS
- 7 August 2002
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 23 (6) , 354-356
- https://doi.org/10.1109/led.2002.1004233
Abstract
In this letter, low resistivity Ru and Ru-Ta alloy films, deposited via reactive sputtering, were evaluated as gate electrodes for p- and n-MOSFET devices, respectively. MOSFETs fabricated via a conventional process flow indicated that the work functions of Ru and Ru-Ta alloys were compatible with p- and n-MOSFET devices, respectively. Both of the metal gated devices eliminated gate depletion effects. Good MOSFET characteristics, such as I/sub DS/-V/sub GS/ and mobility, were obtained for both Ru-gated PMOSFETs and Ru-Ta gated NMOSFETs.Keywords
This publication has 7 references indexed in Scilit:
- Dual work function metal gate CMOS technology using metal interdiffusionIEEE Electron Device Letters, 2001
- Use of metal–oxide–semiconductor capacitors to detect interactions of Hf and Zr gate electrodes with SiO2 and ZrO2Applied Physics Letters, 2001
- Electrical properties of RuO2 gate electrodes for dual metal gate Si-CMOSIEEE Electron Device Letters, 2000
- Impact of gate workfunction on device performance at the 50 nm technology nodeSolid-State Electronics, 2000
- The impact of high-κ gate dielectrics and metal gate electrodes on sub-100 nm MOSFETsIEEE Transactions on Electron Devices, 1999
- A model for hot-electron-induced MOSFET linear-current degradation based on mobility reduction due to interface-state generationIEEE Transactions on Electron Devices, 1991
- Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfacesIEEE Transactions on Electron Devices, 1980