Use of metal–oxide–semiconductor capacitors to detect interactions of Hf and Zr gate electrodes with SiO2 and ZrO2
- 25 June 2001
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 78 (26) , 4166-4168
- https://doi.org/10.1063/1.1380240
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Titanium silicide formation: Effect of oxygen distribution in the metal filmJournal of Applied Physics, 1984
- Relation Between an Atomic Electronegativity Scale and the Work FunctionIBM Journal of Research and Development, 1978