Reactions of Zr thin films with SiO2 substrates
- 1 November 1988
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 64 (9) , 4711-4716
- https://doi.org/10.1063/1.341208
Abstract
The reactions between Zr thin films and SiO2 substrates in the temperature range of 650–950 °C in vacuum have been studied by Rutherford backscattering spectrometry and glancing angle x‐ray diffraction. A Zr‐rich silicide, Zr5Si4, formed next to the SiO2 substrate and a surface layer of Zr oxide appeared on top of the Zr‐rich silicide. The reaction was characterized by an activation energy, Ea =2.8 ±0.2 eV.This publication has 18 references indexed in Scilit:
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