Novel wetting behavior of ^{4}He on cesium
- 6 April 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 68 (14) , 2184-2187
- https://doi.org/10.1103/physrevlett.68.2184
Abstract
We have measured adsorption isotherms on a cesium substrate above and below using a quartz-microbalance technique. The results show that the cesium surface remains dry until the pressure almost reaches the saturated vapor pressure. At liquid-vapor coexistence, however, the wetting film continuously thickens to more than 30 layers. Below , the film at coexistence is superfluid. Above , we resolve a feature in the isotherm just below saturated vapor pressure which is characteristic of a prewetting transition.
Keywords
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