Characterization of microstructure in ion-implanted garnet by transmission electron microscopy
- 1 September 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Magnetics
- Vol. 19 (5) , 1823-1825
- https://doi.org/10.1109/tmag.1983.1062709
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Investigations of ion-implantable submicron bubble materialIEEE Transactions on Magnetics, 1982
- Strain profiles in ion-implanted bubble devices investigated by transmission electron diffractionJournal of Applied Physics, 1982
- Transmission electron microscopy and Auger electron spectroscopy studies of boron implanted silicon single crystalsPhysica Status Solidi (a), 1981
- Ion-implantation conditions and annealing effects for contiguous disk bubble devicesIEEE Transactions on Magnetics, 1980
- Irradiation induced crystalline to amorphous transitionSolid State Communications, 1980
- Crystalline and magnetic properties of an ion-implanted layer in bubble garnet filmsJournal of Applied Physics, 1978