Barrier determinations on Ge–AlxGa1−xAs and GaAs–AlxGa1−xAs p-n heterojunctions
- 1 October 1973
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 23 (7) , 365-367
- https://doi.org/10.1063/1.1654921
Abstract
The energy barriers for p‐n Ge–AlxGa1−xAs and GaAs–AlxGa1−xAs heterojunctions have been determined by capacitance measurements. The results indicate that the valence band of AlxGa1−xAs tends to remain fixed with respect to the vacuum level for different values of x. This leads to spiked barriers in the conduction band for these junctions. The values determined for the barriers are consistent with measurements on p‐p Ge–GaAs junctions.Keywords
This publication has 5 references indexed in Scilit:
- The graded-gap Alx Ga1 − x As–GaAs heterojunctionJournal of Applied Physics, 1972
- Electronic properties of clean cleaved {110} GaAs surfacesSurface Science, 1971
- AN OPTOELECTRONIC COLD CATHODE USING AN AlxGa1−xAs HETEROJUNCTION STRUCTUREApplied Physics Letters, 1970
- DOUBLE-HETEROSTRUCTURE INJECTION LASERS WITH ROOM-TEMPERATURE THRESHOLDS AS LOW AS 2300 A/cm2Applied Physics Letters, 1970
- Composition Dependence of the Ga1−xAlxAs Direct and Indirect Energy GapsJournal of Applied Physics, 1969