Hot-carrier relaxation in p-In0.53Ga0.47As
- 15 March 1982
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (6) , 505-507
- https://doi.org/10.1063/1.93158
Abstract
Experimental results demonstrate that photoinduced carrier heating in In0.53Ga0.47As is substantially reduced in the presence of a large background population of holes. These results are interpreted in terms of the increased effective coupling of carriers to the lattice in the presence of background holes.Keywords
This publication has 3 references indexed in Scilit:
- Velocity field characteristics of minority carriers (electrons) in p-In0.53Ga0.47AsApplied Physics Letters, 1981
- Hot-carrier relaxation in photoexcited In0.53Ga0.47AsApplied Physics Letters, 1980
- Hot electrons and phonons under high intensity photoexcitation of semiconductorsSolid-State Electronics, 1978