A sub-half-micron gate-length GaAs MESFET with new gate structure

1 April 1983

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 4 (4) , 99-101
https://doi.org/10.1109/EDL.1983.25663

Abstract

New gate structure and fabrication technique for GaAs MESFET's have been developed. Utilizing the gate structure, sub-half-micron gate length can easily be obtained by conventional projection photolithography without any gate resistance increase and mechanical adhesion strength decrease.

Keywords

GALLIUM ARSENIDE
MESFETS
RESISTS
FABRICATION
LITHOGRAPHY
SILICON
GOLD
THICKNESS CONTROL
MONITORING
SUBSTRATES

This publication has 3 references indexed in Scilit:

A high aspect-ratio 0.1 micron gate technique for low-noise MESFET'S
IEEE Electron Device Letters, 1982
Extremely low-noise MESFETs fabricated by metal-organic chemical vapour deposition
Electronics Letters, 1981
Super low-noise GaAs MESFET's with a deep-recess structure
IEEE Transactions on Electron Devices, 1980