On-site phosphine purification for gas-source MBE of InGaAlP
- 2 February 1993
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 127 (1-4) , 995-998
- https://doi.org/10.1016/0022-0248(93)90775-r
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Gas-source molecular-beam epitaxy growth of InxGa1−x−yAlyPJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Growth of InGaP on GaAs using gas-source molecular-beam epitaxyJournal of Vacuum Science & Technology B, 1989
- Gas source molecular beam epitaxy of InP, GaInAs and GaInAsPProgress in Crystal Growth and Characterization, 1986
- Summary Abstract: The effect of the oxygen concentration on the electrical and optical properties of AlGaAs films grown by MBEJournal of Vacuum Science & Technology B, 1985