The Detrimental Effect of a Passivation on the Electromigration Lifetime of Narrow Al-Si-Cu Lines
- 1 January 1995
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Stress-induced void formation in metallization for integrated circuitsMaterials Science and Engineering: R: Reports, 1993
- The Effect of Annealing on the Cu Distribution and AI2Cu Precipitation in Ai(Cu) Thin FilmsMRS Proceedings, 1993
- Stress-migration related electromigration damage mechanism in passivated, narrow interconnectsApplied Physics Letters, 1991
- Mechanical Stress and Electromigration FailureMRS Proceedings, 1991
- The effect of passivation thickness on the electromigration lifetime of Al/Cu thin film conductorsJournal of Vacuum Science & Technology A, 1983