Light-induced aging effects in Schottky diodes on sputtered hydrogenated amorphous silicon (a-SiH) : interpretation of the photovoltaic stability
- 1 January 1980
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 35-36, 767-772
- https://doi.org/10.1016/0022-3093(80)90296-3
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Diodes Schottky et MIS tunnel sur silicium amorphe hydrogéné de qualité photovoltaïque préparé par pulvérisation cathodique Caractérisation électrique par mesures capacitivesRevue de Physique Appliquée, 1979
- Reversible conductivity changes in discharge-produced amorphous SiApplied Physics Letters, 1977
- Schottky-barrier characteristics of metal–amorphous-silicon diodesApplied Physics Letters, 1976