An 800 MSps track and hold using a 0.3 /spl mu/m AlGaAs-HEMT-technology

1 January 1994

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

No. 10647775,p. 236-239
https://doi.org/10.1109/gaas.1994.636975

Abstract

A feedforward T/H was developed as past of a 200 MSps/10 bit successive approximation ADC using a 0.3 /spl mu/m AlGaAs-HEMT process. This T/H is able to operate up to a clock frequency of 3 GHz and reaches a THD/spl ges/60 dB up to the Nyquist frequency of the ADC at the nominal clock frequency of 800 MHz. This was realized using a special circuit structure with a signal path and a reference path and a new diode bridge switch with an additional auxiliary bridge.

Keywords

This publication has 4 references indexed in Scilit:

Fully bipolar, 120-Msample/s 10-b track-and-hold circuit
IEEE Journal of Solid-State Circuits, 1992
E-Beam Direct-Write in a Dry-Etched Recess Gate HEMT Process for GaAs/AlGaAs Circuits
Japanese Journal of Applied Physics, 1990
Jitter analysis of high-speed sampling systems
IEEE Journal of Solid-State Circuits, 1990
A 1-GHz 6-bit ADC system
IEEE Journal of Solid-State Circuits, 1987