Scattering times in AlGaN/GaN two-dimensional electron gas from magnetoresistance measurements

This publication has 31 references indexed in Scilit:

• CW operation of short-channel GaN/AlGaN doped channel heterostructure field effect transistors at 10 GHz and 15 GHz
  IEEE Electron Device Letters, 1996
• Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors
  Applied Physics Letters, 1996
• Two-dimensional electron gas properties of AlGaN/GaN heterostructures grown on 6H–SiC and sapphire substrates
  Applied Physics Letters, 1996
• Dephasing time and one-dimensional localization of two-dimensional electrons inGaAs/AlxGa1−xAsheterostructures
  Physical Review B, 1987
• Electron-electron interactions in GaAs-AlxGa1−xAs heterostructures
  Physical Review B, 1986
• Weak localization and negative magnetoresistance in semiconductor two-dimensional systems
  Surface Science, 1986
• Localization of 2D electrons in GaAsAlxGa1−xAs heterostructures
  Surface Science, 1984
• Parabolic Magnetoresistance from the Interaction Effect in a Two-Dimensional Electron Gas
  Physical Review Letters, 1983
• Magneto-quantumtransport on GaAs-AlxGa1−xAs heterostructures at very low temperatures
  Solid State Communications, 1982
• Two-dimensional electron gas at a semiconductor-semiconductor interface
  Solid State Communications, 1979