Identification of EL2 in GaAs as the AsGaantisite centre
- 20 August 1984
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 17 (23) , L627-L632
- https://doi.org/10.1088/0022-3719/17/23/007
Abstract
An investigation in SI GaAs of the photoquenching of the magnetic circular dichroism optically detected magnetic resonance (MCD-ODMR) signals of the antisite, AsGa, defect shows that this centre can be identified as the dominant deep donor EL2. The results suggest that EL2 is the neutral state, D0, of the antisite, implying that the metastable state is the triplet state of this two-electron defect.Keywords
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