Anomalous Time-of-Flight Distributions Observed for Argon Implanted in Silicon and Resputtered by-Ion Bombardment
- 11 August 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 57 (6) , 739-742
- https://doi.org/10.1103/physrevlett.57.739
Abstract
A Si substrate is bombarded by 3-keV ions. From time-of-flight spectra of resputtered Ar neutrals at various target temperatures, we conclude that Ar-bubble formation takes place in the amorphized-Si top layer. The bubbles form and open during etching. The average kinetic energy of the Ar atoms is in agreement with the calculated average potential energy of the Ar atoms inside the bubbles.
Keywords
This publication has 14 references indexed in Scilit:
- Surface morphology of oxidized and ion-etched silicon by scanning tunneling microscopyApplied Physics Letters, 1985
- The formation of solid krypton bubbles in molybdenumScripta Metallurgica, 1985
- Sputtering of condensed noble gases by keV heavy ionsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1984
- Argon-ion assisted etching of silicon by molecular chlorineJournal of Applied Physics, 1984
- An attempt to understand the sputtering yield enhancement due to implantation of inert gases in amorphous solidsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1984
- The energy of helium filled platelets and bubbles in molybdenumRadiation Effects, 1983
- Mass and energy distribution of particles sputter etched from Si in a XeF2 environmentApplied Physics Letters, 1982
- Diffusion enhancement due to low-energy ion bombardment during sputter etching and depositionJournal of Applied Physics, 1980
- Dependence of residual damage on temperature during Ar+ sputter cleaning of siliconJournal of Applied Physics, 1977
- II. The energy spectrum of ejected atoms during the high energy sputtering of goldPhilosophical Magazine, 1968