Simultaneous annealing for implantation activation and spin-on source diffusion into GaInAs: A novel approach for the formation of p n junctions

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Abstract
A new process—simultaneous implantation and diffusion annealing—has been developed for the formation of pn junctions in compound semiconductors. It combines implantation and diffusion, by using doped SiO2 spin‐on films simultaneously as a surface protection during activation of the implants and as a diffusion source. Only a single annealing step is necessary, which is very important for a careful heat treatment of existing semiconductor structures. Examples are presented for GaInAs. The n level formed by Si implantation varies from 1×1017 cm−3 to 6×1018 cm−3, with an increasing dose. The p level is adjusted to about 1×1019 cm−3 by the amount of Zn salt in the spin‐on solution. The position of the pn junction is shifted by the annealing step.

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