Beryllium implantation doping of InGaAs
- 15 February 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (4) , 438-440
- https://doi.org/10.1063/1.94758
Abstract
Ion implantation doping of Be acceptors in n-In0.53Ga0.47As is reported. A significant improvement in peak concentration, depth control, and solubility is achieved with rapid (30 s) thermal anneals compared to conventional 15-min furnace anneals, resulting in p-n junction depths less than 1 μm with peak acceptor concentrations greater than 1018 cm−3. Electrical profiles and p-n junction characteristics are presented.Keywords
This publication has 9 references indexed in Scilit:
- In0.53Ga0.47As submicrometer FET's Grown by MBEIEEE Electron Device Letters, 1983
- In0.53Ga0.47As n-channel native oxide inversion mode field-effect transistorApplied Physics Letters, 1982
- Planar self-aligned ion-implanted InP MOSFETElectronics Letters, 1982
- Be-implanted p-n junctions in Ga 0.47 In 0.53 AsElectronics Letters, 1982
- Ion implantation of Be in In0.53Ga0.47AsApplied Physics Letters, 1982
- Characterization of In0.53Ga0.47As photodiodes exhibiting low dark current and low junction capacitanceIEEE Journal of Quantum Electronics, 1981
- An In0.53Ga0.47As junction field-effect transistorIEEE Electron Device Letters, 1980
- Applications of Electrochemical Methods for Semiconductor Characterization: I . Highly Reproducible Carrier Concentration Profiling of VPE “Hi‐Lo”Journal of the Electrochemical Society, 1980
- In 0.53 Ga 0.47 As p-i-n photodiodes for long-wavelength fibre-optic systemsElectronics Letters, 1979