Ion implantation of Be in In0.53Ga0.47As
- 15 March 1982
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (6) , 517-519
- https://doi.org/10.1063/1.93163
Abstract
Multiple energy Be+ ion implantation has been used to produce p‐type regions in n‐In0.53Ga0.47As (n≃1016 cm−3). A simple technique has been developed for capless annealing of InGaAs up to 700 °C. The activation efficiency of the implanted Be+ is dependent on the implant energy and dosage with a maximum activation of 40% for 50‐keV implants. When the total implant dose exceeds 1014 cm−2, substantial diffusion of Be occurs resulting in a p+‐n−‐n structure. Planar diodes formed by Be+ implantation have a reverse breakdown voltage of 50 V and an ideality factor of 1.5 in the forward direction.Keywords
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